Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides

Y Mitani,H Satake

doi:10.1109/icicdt.2004.1309978

Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides

Y Mitani, H Satake

https://doi.org/10.1109/icicdt.2004.1309978

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Publication Date: Oct 4, 2004

Affiliation: Toshiba (Japan)

#Bias Temperature Stress #Bias Temperature + Show 8 more

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Abstract

In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.

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