Time-Domain Thermoreflectance Study on Superlattice-like Phase Changing Chalcogenide Materials

Abstract

Phase change memory (PCM) has been developed as one of the next generation memory candidates due to its high read/write speeds, high densities, and non-volatile characteristics. This memory uses the phase change of the chalcogenide materials by Joule heating. However, there is a problem of requesting high reset current, thereby increasing power consumption during melt-quench process for its amorphization. As a way to solve the high reset current, interfacial PCM (iPCM) was suggested. It is based on the metastable states formed in superlattice-like GeTe/Sb2Te3 stack of high quality. This PCM operates with a reversible structural change between high and low resistance states without melt-quench process. However, if the heating from electrode is too excessive during the iPCM operation process, unwanted melting can occur and iPCM characteristics can be lost. Therefore, it is necessary to study the thermal effects of superlattice-like phase change material and electrode in order to ensure stability in conventional PCM or iPCM operation.In this study, we conduct time-domain thermoreflectance study on the molecular-beam-epitaxially grown phase change materials; GeTe and Sb2Te3. Phase change layer was consisted of single or superlattice-like structure. TiN metal layer was used to see the thermal boundary resistance between the metal and phase change materials. Au metal layer was deposited as a photothermal transducer layer due to its stability and thermoreflectance coefficient value. Thermal conductivities of signle and superlattice-like thin films are compared to analyze the thermal effects. In addtion, heat conduction between the metallic TiN and phase change material of high quality is considered.