Abstract
AbstractThis paper deals with a computational approach based upon the centered‐points finite‐difference time‐domain (FDTD) technique for evaluating voltages and currents along lossy nonuniform multiconductor transmission lines terminated with arbitrary loads. We emphasize the case of complex nonlinear loads, such as a metal semiconductor field‐effect transistor (MESFET). We illustrate and validate the FDTD technique with time‐domain reflectometer (TDR) experiments. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 296–301, 2001.
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