Time domain global modelling of EM propagation in semiconductor using irregular grids

Abstract

AbstractA two‐dimensional finite volume time domain (FVTD) method using a triangular grid is applied to the analysis of electromagnetic wave propagation in a semiconductor. Maxwell's equations form the basis of all electromagnetic phenomena in semiconductors and the drift‐diffusion model is employed to simulate charge transport phenomena in the semiconductor. The FVTD technique is employed to solve Maxwell's equations on an irregular grid and the finite box method is implemented on the same grid to solve the drift‐diffusion model for carrier concentration. The locations of unknowns have been chosen to allow linking coupled Maxwell's equations and transport equations in a seamless way. To achieve suitable accuracy and computational efficiency, using irregular grid topology allows a finer mesh in doped region and at junction, and a coarser mesh in substrate and insulting regions. The proposed scheme has been implemented and verified by characterizing electromagnetic wave propagation at microwave frequency in a semiconductor slab with arbitrary doping profile. Copyright © 2002 John Wiley & Sons, Ltd.