Abstract
The paper deals with a computer simulation of the creation and chemical annealing behavior of non-bridging oxygen hole centers (NBOHC) in silica exposed to long-time hydrogen implantation. Calculated time dependence of the number of NBOHCs and the intensity of red band luminescence associated with these defects were in a good agreement with experimental data. It allowed estimating the average cross-section of the radiation production of NBOHCs, the radiation-enhanced hydrogen diffusion coefficient and the reaction rate constant for NBOHC’s passivation by implanted hydrogen. We also paid attention to the physical reasons for some discrepancy between simulated dependences and experimental data as well as between calculated parameters and our previous estimations based on some simplifying assumptions.
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