Abstract
Formation, excitation and passivation of defects by absorbed hydrogen have been extensively reported in the literature. Here we present a basic luminescence-diffusion model to simulate creation and chemical annealing behavior of non-bridging oxygen hole centers in silica by their treatment under a long-time hydrogen implantation. The model is in a good agreement with experimental data and explains the uncommon nonmonotonic time dependence of the non-bridging oxygen hole centers luminescence during the hydrogen implantation. The proposed model establishes the quantitative relation between the intensity dependence of luminescence on its intrinsic diffusivity, hydrogen concentration, defect concentration and cross-section of their creation. Possibilities to estimate these parameters based on the experimental data for the efficiency of silica luminescence are also discussed.
Highlights
Balance of hydrogen in silica is very important for fabrication of optical fibers and modern interfaces [1]
In this paper we develop a model of luminescent radiation (LR) temporal changes associated with the cross-sections of the above-mentioned processes and a hydrogen diffusion from the implanted layer
We have presented a basic luminescence-diffusion model to simulate the creation and chemical annealing behavior of nonbridging oxygen hole centers in silica by their treatment with hydrogen under a long-time hydrogen implantation
Summary
Balance of hydrogen in silica is very important for fabrication of optical fibers and modern interfaces [1]. The explanation of the experimental data has been performed in [2] by solving the complete reaction–diffusion problem based on the hydrogen diffusivity, defects and hydrogen concentrations. In this case new defects are not formed and a chemical annealing of the existing defects is occurred. Long-time irradiation by the hydrogen ion causes changes in the luminescent radiation spectra of silica [5,9,13]. Several processes take place: the formation and excitation, and modification and passivation of defects These processes are closely connected and should be studied by solving the complete system of luminescence-diffusion equations. We determine parameters, which can be estimated based on the LR time dependence for different combinations of defect concentration and the hydrogen ions flux density
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
