Time- and Frequency-Domain Characterization of Switching Losses in GaN FETs Power Converters

Abstract

This article presents a methodology for the time-frequency characterization of switching losses in Gallium nitride field effect transistors used in power electronics applications, particularly in dc–dc converters. Typically, switching losses are measured in the time-domain through the integration of the instantaneous power, that is, the product of the voltage multiplied by the current, during the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> transients. Nonetheless, as novel power transistors allow for switching times in the nanosecond range, the accuracy of such measurements is compromised by the limitations of the probe-oscilloscope systems in terms of bandwidth and dynamic range. Here, we analyze the time-domain switching loss measurement method, and then, through a complementary setup we demonstrate how to validate the results in the frequency domain. A dc–dc half-bridge buck converter circuit based on the EPC2001C was used as a representative test sample. Less than 1% of difference in critical parameters such as rise-time, pulse width, state-levels and, switching frequency, is encountered between the time- and frequency-domain approaches. Moreover, the measurement uncertainty was analyzed and estimated to be between ±1% and ±8%. This article allows for highly confident switching loss measurements, a better understanding of the switching phenomena and of the measurement system performance.