Abstract
This manuscript investigates cascading of gallium-nitride (GaN) field-effect transistors (FETs) to accommodate for higher voltage switching operation, beyond the ratings of commercially available single switches. The current GaN FETs present substantial advantages over corresponding silicon (Si) and silicon-carbide (SiC) FETs in terms of switching speed, conduction and switching loss, and thermal capability. However, currently GaN based switching semiconductor devices are not available in high voltage ratings, which could be a limiting factor in their use for high voltage applications. This paper presents the study, design, simulation, and implementation of cascading enhancement-mode GaN (eGaN) devices to demonstrate their superior performance capabilities in comparison to their Si-counter parts. The presented study in this manuscript paves out a way to utilize future high-voltage GaN semiconductor devices in plasma technologies, pulsed microwave tubes, and high voltage direct current transmission applications, which need very high voltages.
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