Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN

Abstract

Epitaxial lateral overgrowth (ELO) is one of the most extensively studied techniques used to improve the mismatched heteroepitaxy of GaN on sapphire (α-Al2O3) substrates. In this method, a mask is first deposited over the GaN seed layer and parallel windows are opened along a specific direction in the mask. GaN is grown vertically at the window position and then grows laterally along the mask surface (wing region). The adjacent GaN regions will coalesce to form a continuous film if enough growth time is used. The impact of the ELO of GaN on sapphire substrates using a SiO2 mask is measured with the white beam synchrotron X-ray topography technique. The topography results show that the crystal planes in the laterally overgrown regions (wings) are tilted. The maximum wing tilt is about 0.36° at a fill factor of 0.5 (fill factor measures the window width relative to the window width plus SiO2 mask width). High-resolution micro-Raman spectroscopy stress-mapping measurements, using Ar+ 488-nm laser excitation, indicate that the GaN epilayer is under compressive stress, as is expected from the growth conditions. The measured average compressive stress is about 460 MPa. Furthermore, a wave-like stress field is observed in the ELO GaN epilayer. The wave valley (low compressive stress region) is usually located at the coalesced region between two adjacent wings. In general, these coalesced regions exhibit about 60 MPa lower compressive stress than the average stress in the ELO epilayer. Voids formed by the tilted wings at the coalesced region are regarded as a possible reason for the lower compressive stress in the coalesced region.