Abstract
The behavior of the stress and the deformation of a GaP layer grown on misoriented (001)Si was investigated for the thickness and the growth temperature. The compressive stress in the GaP layer decreased with increasing thickness up to 0.5 µm and then changed into the tensile stress. However, there was poor dependence of the tensile stress in a 1 µm-thick GaP layer on growth temperature. The tilt deformation of the GaP layer strongly depended on the growth temperature. It was found that the deformation strongly depended on the misfit strain in the GaP layer for a Si substrate at the growth temperature rather than the thermal strain, and that the tilt was under the influence of the atomic step on a Si substrate.
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