Abstract

Pressure and temperature are powerful tools applied to perovskites to achieve recrystallization. Lamination, based on recrystallization of perovskites, avoids the limitations and improves the compatibility of materials and solvents in perovskite device architectures. In this work, we demonstrate tightly compacted perovskite laminates on flexible substrates via hot-pressing and investigate the effect of hot-pressing conditions on the lamination qualities and optical properties of perovskite laminates. The optimized laminates achieved at a temperature of 90 °C and a pressure of 10 MPa could sustain a horizontal pulling pressure of 636 kPa and a vertical pulling pressure of 71 kPa. Perovskite laminates exhibit increased crystallinity and a crystallization orientation preference to the (100) direction. The optical properties of laminated perovskites are almost identical to those of pristine perovskites, and the photoluminescence quantum yield (PLQY) survives the negative impact of thermal degradation. This work demonstrates a promising approach to physically laminating perovskite films, which may accelerate the development of roll-to-roll printed perovskite devices and perovskite tandem architectures in the future.

Highlights

  • Halide perovskites have exhibited intriguing properties including long carrier lifetimes, strong band-edge absorption, high photoluminescence quantum yield (PLQY), tunable emission of high color purity, low cost, and easy processing, emerging as a type of promising material for optoelectronic devices such as solar cells, light-emitting diodes, photodetectors, field effect transistors, memristors, and lasers [1,2,3,4,5,6,7]

  • The laminated perovskites films were prepared by face-to-face hot-pressing two independently fabricated half-stacks of perovskite film on a flexible polyethylene terephthalate (PET)

  • The optimal perovskite laminates were achieved at 90 ◦ C and 10 MPa; these could sustain a horizontal pulling pressure of 636 kPa and a vertical pulling pressure of 71 kPa

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Summary

Introduction

Halide perovskites have exhibited intriguing properties including long carrier lifetimes, strong band-edge absorption, high photoluminescence quantum yield (PLQY), tunable emission of high color purity, low cost, and easy processing, emerging as a type of promising material for optoelectronic devices such as solar cells, light-emitting diodes, photodetectors, field effect transistors, memristors, and lasers [1,2,3,4,5,6,7]. Song et al synthesized ultrathin two-dimensional (2D) CsPbBr3 nanosheets on flexible substrates by ink-injecting [15], and Chen et al reported a vapor-assisted solution process to manufacture methylammonium lead iodide (MAPbI3 ) thin film. GPa-scale high pressure (1 GPa ≈ 10,000 atm), achieved through a diamond anvil cell, has been reported to induce phase transition and bandgap engineering of perovskites [16,17,18,19]. The high pressure can tilt the PbBr6 octahedra of methylammonium lead bromide (MAPbBr3 ) and destroy the long-range ordering of organic cations, leading to two phase transformations below 2 GPa and a reversible amorphization arising at approximately 2 GPa [16].

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