Ti-Doped VO2 Films Grown on Glass Substrates by Excimer-Laser-Assisted Metal Organic Deposition Process

Abstract

V1-xTixO2 films were prepared on glass substrates by excimer-laser-assisted metal organic deposition (ELAMOD) and thermal MOD processes. The VO2 phase was successfully formed in the range of x = 0–0.35 at 300 °C in air using the ELAMOD process. This is a big advantage in terms of fabrication process for glass or organic substrates. It was also confirmed that dense films were obtained by preparing TiO2 buffer layers on glass substrates. Furthermore, the detailed effect of Ti content in VO2 films on metal–insulator (MI) transition properties was examined. As Ti content increased, the broadening of MI transition and the decreasing of the hysteresis width occurred. At x = 0.14, the hysteresis disappeared. The temperature coefficient of electrical resistance (TCR) value of the film (x = 0.14) remained at approximately -3%/K from 300 to 340 K and was more than -4%/K from 340 to 350 K.