Abstract
Significant enhancements in flux-pinning were obtained for Dy-doped, YBCO films via a metalorganic deposition (MOD) process on rolling-assisted biaxially textured substrates (RABiTS). It has been reported previously that incorporation of excess rare-earth ions during the MOD process, results in improvement of J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> for H//c, however, a decrease in J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> for H//ab is observed. We report here that by altering the processing conditions the reduction in the magnitude of the current peak for H//ab can be minimized while significantly enhancing the random pinning at all field orientations. The result is a YBCO film with significantly reduced anisotropy compared to the typical YBCO films prepared by the MOD process. This is accomplished by incorporating both a high density of stacking faults and (Dy, Y) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanoparticles which result in the strong pinning for H//ab and a broad pinning peak for H//c respectively.
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