Abstract
Breakdown voltage for Ti/4H-SiC type Schottky diode with six guard rings have been calculated theoretically and by mean of numerical simulations. It is shown that the breakdown voltage can be increase at the minimum on 100 V in case when thickness of the n-type 4H-SiC epitaxial layer increase from 18 up to 22 μm. It is established that the breakdown voltage value for Ti/4H-SiC type Schottky diode with guard rings calculated by mean simulation in ATLAS program and theoretically have good approximation. Thus, above approach gives the possibility for projection of diode structure with different 4H-SiC epitaxial layer thickness with higher breakdown voltage value.
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