Abstract
1–2 MeV He ion RBS and electron diffraction have been used to study the Ti silicide formation induced by As ion beam mixing. Upon As bombardment with dose range from 1 x 1015-1 x 1016 As/cm2, a uniform layer of amorphous TiSi phase is formed at the interface of Ti/Si, and the thickness of the TiSi layer is linearly proportional to the square root of implantation dose. After high dose As ion implantation, the amorphous TiSi exists even after post-annealing at 650°C for 30 min. The mechanism for these phenomena is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
