Abstract
The effects of As ion implantation on Ti silicide formation and As redistribution have been studied with 2–3 MeV He ion RBS and electron diffraction for three different kinds of As implanted samples: Ti/Si(As), TiSi, (As)/Si and Ti(As)/Si. The As ion implantation dose range is 1 × 1015−2 × 1016 As/cm2, and the furnace annealing is performed at 550–750°C for 5–60 min. The retardation of silicide formation, the change of the first phase of formation from TiSi to Ti5Si3 and the redistribution of As atoms through TiSi2 layer have been investigated. Rapid thermal annealing has also been used to study the Ti silicide formation process. The mechanisms for As redistribution and its effects on Ti silicide formation have been discussed for these two kinds of annealing methods.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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