Abstract
A multi-layered Ti (50nm)/Ni (50nm)/Ti (50nm)/Au (50nm) metallic contact to Al-doped ZnO thin films (ND=3.64×1019cm−3) was reported in this paper. The as-deposited Ti/Ni/Ti/Au scheme showed a specific contact resistivity of 2.07×10−4Ωcm2. And a lowest specific contact resistivity of 6.69×10−5Ωcm2 was obtained after annealing at 500°C. The specific contact resistivity showed a decreasing tendency with the annealing temperature up to 500°C. However, for the sample annealed at above 600°C, the I–V curves revealed gradual Schottky transformation. Interface diffusions and reactions induced by annealing treatment were found to be responsible for the decrease of Ohmic contact resistivity and the Schottky transformation.
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