Ti/Ni/Au contacts to n-SiC after low energy implantation

Abstract

The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10−6Ωcm2. The value of ρc increased significantly at an implant dose of 1×1015ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.