Ti doped SiOC precursor to activate gyroid sensing structures

Abstract

Ti-doped polymer-derived SiOC ceramic has multi-functional sensing capability due to its semiconductive properties. Their mechanical and chemical stability provide reliable support for their long-term service and safe operation in extreme environments. The sensing properties of Ti-doped SiOC (SiTiOC) can be optimized by modulation carrier concentration. Meanwhile, it can be fabricated by 3D printing as structural-strengthened components, promising for abnormal environmental signals warning under harsh conditions. In this work, SiTiOC gyroid structures were constructed by vat photopolymerization. The resulting components had thermistor characteristics with a negative temperature coefficient. After the Ti doping, the structures exhibited a high conductivity of 1.10 S/m, as the Ti ions formed an efficient percolation network by introducing acceptor impurities. The structures also had piezoresistive capability as the conductive phases can generate a tunneling-percolation conduction effect. They can detect a strain of less than 0.5%. Furthermore, the structures can realize n-butanol sensing for their p-type semiconductor properties. The components also had an excellent mechanical performance with the compressive strength and Young's modulus of 92.83 MPa and 4.28 GPa, respectively, ensuring reliable service under pressure loading.