Abstract
The effect of annealing on the stability of ohmic contacts on heavily Al-doped n-ZnO is reported. Due to the high n-type doping levels in the ZnO, the as-deposited contacts are ohmic with an excellent specific contact resistivity of . Subsequent annealing produces a minimum value of after processing at . The absence of any temperature dependence to the contact resistance indicates that tunneling is the dominant current transport mechanism. Annealing the contact structure at produces Zn outdiffusion through the , intermixing of Au and Ti, and roughening of the contact surface morphology. The ease of ohmic contact formation to the Al-doped ZnO and extremely low contact resistance achievable even with low-temperature processing makes this metallization scheme attractive in applications where high processing temperatures cannot be employed.
Published Version
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