Abstract
In this study the breakdown voltage for Ti/4H-SiC type Schottky diode with six guard rings and JTE layer has been calculated by mean of numerical simulations. It is established that increase of the n-type 4H-SiC epitaxial layer from 14 up to 20 μm and addition of JTE layer lead to increase of breakdown voltage value on ∼900 V in contrast to the same diode without JTE. The above-mentioned diode’s structure gives the possibility for designing and production of diode with higher breakdown voltage value up to 3 kV.
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