Abstract
quantum well (QW) heterostructures [1{3].The strain-induced valence band splitting in Ge/GeSi structures decreases theefiective masses of two-dimensional holes and the binding energies of conflnedacceptors compared with those in bulk Ge, in contrast to the donors whose bindingenergy is known to increase due to additional conflnement of the wave functionby the QW potential. In this paper, we employ the newly developed technique [3]to distinguish between difierent type shallow acceptor centers contributing to themagnetoabsorption in the THz range in Ge/GeSi heterostructures. The methodis based on measuring the difierential impurity magnetoabsorption in THz rangeat the modulated bandgap optical excitation. The absorption signal is due to free(137)
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