Abstract
The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disorder modify the confinement profile, the ground state transition energy and the strain-induced heavy hole-light hole band edge splitting. The shape of the confinement profile of disordered InGaAs/GaAs quantum well structures is shown to be more sensitive to the indium content than to the width of the as-grown quantum well.
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