Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well

Abstract

We report on the electronic transport properties of p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well. The experiments included the spectral photoluminescence between 8 and 300 K, and Hall effect measurements at temperatures between 14 and 300 K. The effect of strain which induces splitting of the valence band as light and heavy hole bands on transport is discussed. The calculated band alignment of the GaInAs sample using model-solid theory including strain effects indicates large conduction band discontinuities and a much smaller valance band discontinuity in GaInAs. The effect of the conduction and valance band discontinuity on the electronic transport properties is also discussed.