Abstract
We report generation of coherent terahertz electromagnetic transients from GaAs/Al0.3Ga0.7As quantum wells in perpendicular fields. Although, at low temperature, the quantum well barriers suppress the transport current perpendicular to the layers by at least two orders of magnitude compared to bulk, we observe terahertz signals that are comparable in strength to those generated from bulk GaAs surfaces. This directly proves that the field-induced polarization of photoexcited electron-hole pairs is an important mechanism for the generation of terahertz radiation at semiconductor surfaces.
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