Abstract
We report on the THz pulse detection by a photoconductive InGaAs High Electron Mobility Transistor with enhanced sensitivity due to induced nonlinearities mixing the rectified optical pulse with the THz pulse. The experimental setup (see Figure 1) is similar to that used in the THz Time Domain Spectroscopy (TDS) but instead of a photoconductive antenna typically fabricated on low temperature grown (LT) GaAs, we use a submicron HEMT (with a 130 nm gate) connected to a 50 GHz transmission line (see Figure 2) to improve the bandwidth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.