Abstract
Abstractmagnified imageAlthough the steady‐state secondary photoconductivity in amorphous semiconductors is fairly well understood, photocarrier transport with a subpicosecond time resolution (the THz region in the frequency domain) is still not clear. The frequency response of short‐lived photocarriers in the THz region is discussed in a‐Si:H here. It is shown that THz‐photoconductivity is highly influenced by the mesoscopic inhomogeneity (10‐nm scale) originating from potential fluctuations. This behavior is basically the same as observed in the radio‐frequency (RF) range.
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