THz InP bipolar transistors-circuit integration and applications

M Urteaga,A Young,Z Griffith,J Hacker,R Maurer,R Pierson,P Rowell,M.J.W Rodwell,B Brar,S.K Kim

doi:10.1109/csics.2017.8240463

THz InP bipolar transistors-circuit integration and applications

M Urteaga, A Young + Show 8 more

https://doi.org/10.1109/csics.2017.8240463

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Publication Date: Oct 1, 2017

Citations: 9

Affiliation: Teledyne Technologies (United States), University of California, Santa Barbara

#Transistor Technologies #Indium Phosphide Heterojunction Bipolar Transistor + Show 8 more

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Abstract

Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications.

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