Abstract
AbstractAn effective approach to manipulate terahertz (THz) waves involves the utilization of a device structure. In this particular investigation, we have successfully fabricated a SnS2 nanofilm device using femtosecond laser direct ablation. The passive and active polarization‐sensitive characteristics of the SnS2 nanofilm device were examined within the THz frequency range, employing different line spaces of 500, 600, and 700 μm. The combination of the device effect and SnS2 absorption led to an enhanced passive polarization modulation. Moreover, when an external electric field was applied to the SnS2 nanofilm device along the device line, persistent switching and linear modulation of THz wave transmission were observed. These findings indicate that the integration of material properties and device structure in this SnS2 device renders it highly suitable for applications in ultrafast THz switches, filters, and modulation devices.
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