Abstract
The fabrication of p—n—p—n structures with high breakover voltages and low holding voltages in the on state is limited both by the technological feasibility of increasing the minority carrier lifetime in the thick base of the structure and by the increase in switching-off time with lifetime. These limitations are largely avoided when the structure contains 2n layers with ≥n 3. Such a structure has n — 1 collector junctions and n emitter junctions. The breakover voltage and reverse voltage can be increased by a factor n — 1 in comparison with the four-layer structure, while forward losses are increased only slightly. The particular features of the switching on and off of multicollector structures demand that both the collector and the emitter junctions be made as p—n junctions with controllable avalanching. Experimental current—voltage characteristics are presented for a two-collector six-layer structure produced by successive diffusion.
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