Abstract
The lateral field at the turn-on of a large area thyristor is found to have two origins; the potential difference at the moving boundary between the ON- and the OFF-region as well as the redistribution of the charges on the collector junction onto the emitter junctions. Experimentally, two transient peaks due to the two origins are observed by the measurement of the surface field of n-base layer. For the former origin, it is shown numerically that the lateral field at the boundary is very high near the collector junction, e.g., 104 V/cm for VF=10 V. Because of this high field, the lateral flux of minority carriers from the ON-region is reduced and is negative near the collector junction.
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