Through Glass Via (TGV) Solutions for Wafer and Chip level Interposers and RF Integration Methods for High Frequency Applications

Abstract

This presentation will discuss TGV market trends and a low cost solution using new glass and synthetic fused quartz materials, TCE matched Cu metalizations, and designs for high density interconnect. The glass substrate or wafer combined with the low cost Cu metalization offers the market a solution that it has not yet seen. Applications are MEMS devices, Signal processing devices, memory storage devices, where hermeticity and high reliability are required, but the real challenge is how to achieve this at low cost. TGV technology offers significant advantages over Through Silicon Via (TSV) techniques, in that the glass can be assembled with the Si wafer or as a die with several highly reliable bonding techniques, which will be discussed. Technology continues to evolve requiring form factors that are smaller and smaller while still maintaining high frequency performance and long battery life; which are driving more interconnects from single IC's. Glass Interposers offer a high aspect ratio of wafer/substrate thickness to via diameter, and this paper will demonstrate 25–50micron vias in 10–15mil thick glass or synthetic fused quartz using low cost methods of production. While this method may be disruption to the current TSV supply chain to IC Device manufacturers, it will offer them a low cost, highly reliable solution they seek. The solution is enabled by an AGC manufactured Synthetic Quartz using a patented process that facilitates low impurities levels which results in an insertion loss previously unavailable at in both polymeric substrates and ceramic substrates.