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Abstract
We investigate the effect of single grain boundary (SGB) with arbitrary angles on the threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) variation in sub-50-nm polysilicon (poly-Si) channel devices using 3-D simulation. An SGB in the poly-Si channel causes changes in potential barrier profile resulting in the variation of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> . As the planar devices scale down to 20-nm, oblique SGB can significantly increase the whole potential barrier profile and cause large V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> variation. However, due to superior gate controllability, the gate-all-around devices show relatively small increase of the conduction energy band, and thus mitigate the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> variation even in 20-nm poly-Si channel.
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