Year-end Sale % OFF 
Abstract
We perform a comparative study of the threshold voltage (Vth) variation between inversion-mode and junctionless nanowire devices with oblique single grain boundary (o-SGB) in a sub-40 nm poly-silicon (Poly-Si) channel using 3D simulation. The Vth variation due to the o-SGB becomes significant as the devices scale down to 20 nm where the o-SGB can fully affect the whole channel potential. In addition, due to relatively less flat energy band in the channel, the junctionless Poly-Si nanowire devices show larger Vth variation compared with the inversion-mode devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
