Abstract
Tunable threshold voltage of a thin-film transistor (TFT) is highly desirable for designing multifunctional electronic circuits. In this letter, an ultrathin SnO x capping layer was adopted to modify the threshold voltage of bottom-gate amorphous indium–gallium–zinc-oxide (a-IGZO) TFTs. A threshold voltage shift from 15.2 to −9.0 V was observed as the SnO x thicknesses increased from 0 to 19 nm, accompanying by a sizable increase of the intrinsic electron concentration in the channel layer. It was believed that the SnO x capping layer can extract loosely bound oxygen from the a-IGZO, which was supported by the SnO x composition variation with its thickness. Combining an uncovered a-IGZO TFT with a SnO x capped a-IGZO TFT, an enhancement/depletion inverter with a voltage gain of up to 45.9 was successfully demonstrated.
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