Threshold voltage model development of N+ pocket vertical junctionless TFET (V-JL-TFET) as a label free biosensor

Abstract

This work investigates into the potential application of an improved N+ pocket Vertical Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the biosensor, an analytical model based on device physics was developed that accounts for the impact of both charged and uncharged biomolecules on the threshold voltage (Vth). As a result, the developed model offers a solution that is applicable for both uncharged and charged biomolecules. This model demonstrates a strong agreement with the experimentally determined threshold voltage (Vth) obtained from simulation results. Furthermore, sensitivity is obtained by assessing the shift in threshold voltage (Vth) resulting from changes in the dielectric constant. It's observed that Vth increases with decrease in dielectric value. The Vth value with empty nanogaps has been used as a reference point. Finally, the sensitivity of gate threshold voltage was calculated, and the obtained values are high enough to detect both charged and uncharged biomolecules. A detailed analysis of Selectivity, Linearity, stability and reliability of the proposed Biosensor is also presented.