Abstract

Threshold voltage (VTH) of SiC-MOSFETs on various crystal faces has been investigated systematically using the same bias-temperature-stress (BTS) conditions. In addition, dependences of gate-oxide-forming process on VTH instability is also discussed. Nitridation treatments such as N2O and NH3 post-oxidation annealing (POA) are effective in stabilization of VTH under both positive-and negative-BTS tests regardless of crystal face. On the other hand, serious VTH instability was confirmed in MOSFETs with gate oxide by pyrogenic oxidation followed by H2 POA.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call