Abstract
Threshold voltage dependence on channel length of short channel MOSFETs is remodelled from simple one D-approximation of 2D-problem taking into considerartion the flat-band voltage change in the short channel region. Effect of source/drain junction depths and back gate bias is also taken into account. It is shown that in the short channel region, flat-band voltage increases with decrease in channel length and reaches to a limiting value of 2VFB. Threshold voltage variation with the channel length further reduces due to change in flat-band voltage and results in performance unsuitable for logic designs.
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