Abstract
Strong dose dependence was observed in the relation between threshold voltage and forward back-gate bias, although in the case of thick depletion layers (reverse back-gate bias) the characteristics showed no dependence of the subsurface concentration. Due to the higher concentration at the subsurface, the gain term β, which decreases with increasing implantation dose, also shows stronger reduction at low field, so that the concave β-vs-field characteristics change to convex curves in the case of higher dose.
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