Abstract
The threshold voltages of n-channel and p-channel thin-film Si-on-Insulator (SOI) MOSFETs have been controlled by employing Tantalum (Ta) for gate materials in 1 V applications. The threshold voltage control in SOI MOSFETs by the work function of gate material, that is, work function engineering is needed. In order to suppress the reaction between Ta and gate oxide, low-temperature processing after the gate oxide step was successfully established.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
