Abstract
aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea bDepartment of Electrical Engineering, Stanford University, Stanford, California 94305, USA cDepartment of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA dDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea
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