Abstract
The threshold switching (TS) mechanism, real-time transient switching speed responses and delay times of time-resolved TS behavior of AlTe-based selector are studied for being a future device in selector-memory arrays. The physical mechanism of TS behavior, which determines the switching parameters, was explained by trap-limited conduction model through numerical calculations. The transition time of the AlTe-based selector at a specific voltage can occur within 7 ns, and the device exhibits an extremely short delay time of 3 ns. The transient parameters of the selector device play an important role in operating the memory of high-density 1 selector-1 ReRAM arrays.
Published Version
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