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https://doi.org/10.1049/el:20001230
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Cite Journal: Electronics Letters |  Publication Date: Sep 28, 2000 |
 Citations: 15 |
Affiliation: University of Bristol, Agilent Technologies (United States)
A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5λ/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching.
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