Abstract
ABSTRACTThe initial diffusion stage (lIDS) of Zn in InP from polymer spin-on films has been investigated. The threshold diffusion temperature of 375°C has been established. It has been found that the heavily-doped near-surface layer, that consisted of electrically neutral zinc-containing complexes, was formed at IDS, while a low part of Zn was electrically active. The Zn diffusivity during IDS has been found to be at least two orders of magnitude more than the Zn diffusivity obtained after an isothermal diffusion.
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