Abstract
This chapter provides a comprehensive review on the progress achieved concerning Three-Dimensional (3D) vertical resistive random access memory (VRRAM). Compared with 3D X-point structure, the 3D VRRAM exhibits several advantages. A self-rectifying device is one type of self-selective RRAM cell, working similarly as a combination of diode and resistive switching. Metal plane based 3D VRRAM is widely studied due to its simple fabricating process and low cost. In 3D VRRAM arrays, a correct operation of reading and writing on a cell relies on the effective elimination of the sneaking coming from the neighboring cells. Despite all the challenges listed in Section 3.4, 3D VRRAM will be continuously improved and bring revolutionary changes for memory hierarchy. 3D crossbar arrays have some basic problems, such as IR drop, disturbance, and thermal coupling. The disturbance mainly occurs in the devices that are located in partly selected rows or columns, depending on different bias schemes.
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