Abstract
We have demonstrated a position controlled GaN nano-structure fabrication by ion beam mediated growth methods. For this fabrication, we used two different methods. One is the “droplet epitaxy” which is a micro-crystal growth from Ga droplet followed by nitridation. By this method, the GaN micro-crystals in about 800nm were found to be grown and cathode luminescence in broad wavelength (400–600nm) were observed. Another one is the focused ion beam assisted chemical vapor deposition. Ga precursor gas and atomic N radicals impinged onto the surface simultaneously during the irradiation. By this method, the GaN nano-crystals of 200nm×100nm block with 50nm height was fabricated and strong near-band edge emission at 3.37eV from GaN were observed. From the obtained results, ion beam assisted chemical vapor deposition proved to be a promising method to make GaN nano-crystal arrays.
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