Abstract
A mathematical model of three-dimensional exciton-diffusion excited by a narrow electron beam in a semiconductor material is described and studied. It is shown that the obtained model can be used to estimate the exciton-diffusion coefficient in accordance with results of experimental time-of-flight measurements for samples coated with an opaque mask with circular holes. Parameters that are characteristic for GaN are used in the simulation.
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More From: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
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