Abstract
Silicon carbide (SiC) is widely used in high power electronic devices. However, defects on the SiC significantly reduce the yield and decrease the performance of SiC. Accurate detection of the defects is essential in the process control. We demonstrated a noninvasive three-dimensional (3D) defect detection method for SiC using optical coherence tomography (OCT). Defects including the triangular defects, hexagonal voids, grain boundaries, and carrot defects were inspected and analyzed on SiC wafers. The 3D images of defects acquired with OCT provided detailed information on the 3D structures and dimensions of defects, and the locations and orientations of the defects inside the wafers. This technique was not only useful for rapid defect screening in the process control, it was also extremely helpful in understanding the formation mechanism of these defects in SiC.
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