Abstract
When forming waveguides in LiNbO3 by Ti or H diffusion, measuring the lateral and depth distribution of the diffusing species is important to accurately model waveguide formation. We have analyzed waveguides using secondary ion mass spectrometry (SIMS) image depth profiling to provide a three-dimensional analysis of Ti-diffused and proton-exchanged waveguides 2-20 micrometers wide. Cesium ion bombardment and negative secondary ion spectrometry were utilized to obtain the optimal detection limits and sputtering rates. The image depth profiling technique consists of sequentially recording digital ion images of a sample as it is sputtered. Computer processing of the imaged volume allows cross-sectional images and depth profiles of selected areas to be constructed. Measured Ti-diffusion depth profiles are a function of initial Ti film thickness, stripe width, and processing conditions. Cross-sectional images of both types of waveguides shows that lateral diffusion of Ti is greater than that of H for 6 micrometer waveguides.
Published Version
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