Abstract
Long lifetime violet InGaN-multi-quantum-well (MQW)/GaN/AlGaN separate-confinement heterostructure laser diodes (LDs) were successfully fabricated using an epitaxially laterally overgrown GaN (ELOG) by reducing a large number of threading dislocations originated from an interface between GaN and sapphire substrate. The threading dislocations shorten the lifetime of the LDs through an increase of the threshold current density. The LDs with cleaved mirror facets showed an output power as high as 30 mW under RT-CW operation with a stable fundamental transverse mode. The lifetime of the LDs at a constant output power of 5 mW was estimated to be approximately 3,000 hours under CW operation at an ambient temperature of 50 degrees Celsius. These violet InGaN-based LDs are already commercially available in a market.
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